NTTFS4C06N دیتاشیت

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مشاهده دیتاشیت NTTFS4C06N	دانلود دیتاشیت

RoHS: true
Type: N Channel
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi NTTFS4C06NTWG
Operating Temperature: -55°C~+150°C@(Tj)
Power Dissipation (Pd): 31W
Total Gate Charge (Qg@Vgs): 11.6nC@4.5V
Drain Source Voltage (Vdss): 30V
Input Capacitance (Ciss@Vds): 1.683nF@15V
Continuous Drain Current (Id): 67A
Gate Threshold Voltage (Vgs(th)@Id): 2.2V@250uA
Reverse Transfer Capacitance (Crss@Vds): 40pF@15V
Drain Source On Resistance (RDS(on)@Vgs,Id): 3.4mΩ@10V,30A
Package: DFN-8(3x3)
Manufacturer: onsemi
Series: -
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 67A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 3366pF @ 15V
FET Feature: -
Power Dissipation (Max): 810mW (Ta), 31W (Tc)
Mounting Type: Surface Mount
Supplier Device Package: 8-WDFN (3.3x3.3)
Package / Case: 8-PowerWDFN
Base Part Number: NTTFS4
detail: N-Channel 30V 11A (Ta), 67A (Tc) 810mW (Ta), 31W (Tc) Surface Mount 8-WDFN (3.3x3.3)